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| 2SK3441 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) 2SK3441 DC-DC Converter Relay Drive and Motor Drive Applications Unit: mm * * * * Low drain-source ON resistance: RDS (ON) = 4.5 m (typ.) High forward transfer admittance: |Yfs| = 80 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 60 V) Enhancement-mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kW) Gate-source voltage DC Drain current (Note 1) Pulse (t < 1 ms) = (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 60 60 20 75 300 125 468 75 12.5 150 -55 to 150 A Unit V V V Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC W mJ A mJ C C SC-97 2-9F1B JEITA TOSHIBA Weight: 0.74 g (typ.) Circuit Configuration Notice: Thermal Characteristics Characteristics Thermal resistance, channel to case Symbol Rth (ch-c) Max 1.00 Unit C/W Please use the S1 pin for gate input signal return. Make sure that the main current flows into S2 pin. 4 Note 1: Please use devices on condition that the channel temperature is below 150C. Note 2: VDD = 25 V, Tch = 25C (initial), L = 113 mH, RG = 25 W, IAR = 75 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device. Please handle with caution. 1 2 3 1 2002-02-06 2SK3441 Electrical Characteristics (Note 4) (Ta = 25C) Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("miller") charge tf toff Qg Qgs Qgd VDD ~ 48 V, VGS = 10 V, ID = 75 A Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) |Yfs| Ciss Crss Coss tr ton VGS 10 V 0V 4.7 W ID = 38 A VOUT RL = 0.79 W VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 16 V, VDS = 0 V VDS = 60 V, VGS = 0 V ID = 10 mA, VGS = 0 V ID = 10 mA, VGS = -20 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 38 A VGS = 4 V, ID = 38 A VDS = 10 V, ID = 38 A Min 3/4 3/4 60 40 1.3 3/4 3/4 40 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 Typ. 3/4 3/4 3/4 3/4 3/4 4.5 5.8 80 9300 910 1435 18 40 42 250 210 145 65 Max 10 100 3/4 3/4 2.5 5.8 10 3/4 3/4 3/4 3/4 3/4 3/4 ns 3/4 3/4 3/4 3/4 3/4 nC pF Unit mA mA V V mW S VDD ~ 30 V Duty < 1%, tw = 10 ms = Note 4: Please connect the S1 pin and S2 pin, and then ground the connected pin. (However, while switching times are measured, please don't connect and ground it.) Source-Drain Ratings and Characteristics (Note 5) (Ta = 25C) Characteristics Continuous drain reverse current (Note 1, Note 5) Pulse drain reverse current (Note 1, Note 5) Continuous drain reverse current (Note 1, Note 5) Pulse drain reverse current (Note 1, Note 5) Forward voltage (diode) Reverse recovery time Reverse recovery charge Symbol IDR1 IDRP1 IDR2 IDRP2 VDS2F trr Qrr Test Condition 3/4 3/4 3/4 3/4 IDR1 = 75 A, VGS = 0 V IDR = 75 A, VGS = 0 V, dIDR/dt = 50 A/ms Min 3/4 3/4 3/4 3/4 3/4 3/4 3/4 Typ. 3/4 3/4 3/4 3/4 3/4 60 50 Max 75 300 1 4 -1.5 3/4 3/4 Unit A A A A V ns nC Note 5: drain, flowing current value between the S2 pin, open the S1 pin drain, flowing current value between the S1 pin, open the S2 pin Unless otherwise specified, please connect the S1 and S2 pins, and then ground the connected pin. Marking Lot Number K3441 Type Month (starting from alphabet A) Year (last number of the christian era) 2 2002-02-06 2SK3441 ID - VDS 100 Common source Tc = 25C Pulse test 8 10 3.4 200 6 4 3.8 3.6 160 10 5 3.8 120 4.5 4 ID - VDS Common source Tc = 25C Pulse test 80 (A) ID 60 ID (A) Drain current 40 Drain current 3.6 80 3.2 3.4 3.2 VGS = 3 V 20 VGS = 3 V 40 0 0 0.2 0.4 0.6 0.8 1.0 0 0 2 4 6 8 10 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID - VGS 120 Common source VDS = 10 V Pulse test 0.6 VDS - VGS Common source Tc = 25C Pulse test (A) 80 VDS Drain-source voltage (V) 100 0.5 0.4 ID = 70 A Drain current ID 60 0.3 40 25 20 100 Tc = -55C 0.2 35 0.1 15 0 0 1 2 3 4 5 6 0 0 2 4 6 8 10 12 Gate-source voltage VGS (V) Gate-source voltage VGS (V) iYfsi - ID 300 50 Common source VDS = 10 V 100 Pulse test Common source 30 Tc = 25C Pulse test RDS (ON) - ID iYfsi (S) Forward transfer admittance Drain-source on resistance RDS (ON) (mW) Tc = -55C 50 30 100 25 10 VGS = 4 V 5 3 10 10 5 1 3 5 10 30 50 100 1 1 3 5 10 30 50 100 Drain current ID (A) Drain current ID (A) 3 2002-02-06 2SK3441 RDS (ON) - Tc 12 Common source Pulse test 35 15 8 ID = 70 A 300 10 5 100 50 30 3 IDR - VDS Drain-source on resistance RDS (ON) (m W) Drain reverse current IDR (A) 10 VGS = 0, -1 V 6 VGS = 4 V 4 VGS = 10 V 2 ID = 15, 35, 70 A 10 5 3 Common source Tc = 25C Pulse test -0.4 -0.8 -1.2 -1.6 -2.0 0 -80 -40 0 40 80 120 160 1 0 Case temperature Tc (C) Drain-source voltage VDS (V) Capacitance - VDS 100000 50000 30000 5 Vth - Tc Common source VDS = 10 V 4 ID = 1 mA Pulse test 3 Capacitance C 10000 5000 3000 Common source 1000 VGS = 0 V f = 1 MHz 500 Tc = 25C 300 0.1 0.3 0.5 1 3 5 10 Ciss Gate threshold voltage Vth (V) (pF) 2 Coss 1 Crss 30 50 100 0 -80 -40 0 40 80 120 160 Drain-source voltage VDS (V) Case temperature Tc (C) PD - Tc 200 50 Dynamic input/output characteristics VDS 25 Common source ID = 75 A Tc = 25C 20 Pulse test (W) (V) 160 40 PD VDS Drain power dissipation Drain-source voltage VDD = 48 V 24 20 12 10 VGS 80 10 40 5 10 0 40 80 120 160 200 0 0 80 160 240 320 0 400 Case temperature Tc (C) Total gate charge Qg (nC) 4 2002-02-06 Gate-source voltage 120 30 15 VGS (V) 2SK3441 rth - tw 10 Normalized transient thermal impedance rth (t)/Rth (ch-c) 1 Duty = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.00001 PDM t T Duty = t/T Rth (ch-c) = 1.0C/W 0.0001 0.001 0.01 0.1 1 10 Single Pulse width tw (s) Safe operating area 1000 600 EAS - Tch (A) 100 ID max (continuous) 10 1 ms * 100 ms * Avalanche energy EAS VDSS max (mJ) ID max (pulsed) * 500 400 Drain current ID DC operation Tc = 25C *: Single nonrepetitive pulse Tc = 25C Curves must be derated linearly with increase in temperature 300 200 1 100 0.1 0.1 1 10 100 1000 0 25 50 75 100 125 150 Drain-source voltage VDS (V) Channel temperature (initial) Tch (C) 15 V 0V BVDSS IAR VDD VDS Waveform AS = ae o 1 B VDSS / x L x I2 x c cB / 2 VDSS - VDD o e Test circuit RG = 25 W VDD = 25 V, L = 236 mH 5 2002-02-06 2SK3441 RESTRICTIONS ON PRODUCT USE 000707EAA * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 6 2002-02-06 |
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